N-Channel PowerTrench MOSFET featuring 60V drain-source breakdown voltage and 2.5mΩ maximum drain-source on-resistance. This single-element transistor offers a continuous drain current of 25A and a maximum power dissipation of 104W. Designed for surface mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.8ns fall time, 27ns turn-on delay, and 63ns turn-off delay, with a nominal gate-source voltage of 1.8V. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi FDMS86500L technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.5MR |
| Element Configuration | Single |
| Fall Time | 7.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 12.53nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.0681g |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS86500L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
