N-channel MOSFET transistor featuring a 30V drain-source breakdown voltage and 40A continuous drain current. Offers a low 1.9mΩ drain-source on-resistance at a 10V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 83W and operating temperatures from -55°C to 150°C. Includes a 1.5V threshold voltage and is RoHS compliant.
Current Rating40A
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS8660S technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.345nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 2.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 76ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS8660S Datasheet
Download the complete datasheet for Onsemi FDMS8660S to view detailed technical specifications.
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