FDMS8690

30V N-CH MOSFET, 27A ID, 7.4mR Rds(on), Surface Mount

N-Channel Power Field-Effect Transistor, surface mount, designed for high-efficiency power switching applications. Features a 30V drain-to-source breakdown voltage and a low 7.4mΩ drain-to-source resistance at a 10V gate-to-source voltage. Offers a continuous drain current of 27A and a maximum power dissipation of 37.8W. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 19ns fall time and 26ns turn-off delay. This RoHS compliant component is packaged in tape and reel for automated assembly.

Current Rating19.8A

MountingSurface Mount

PolarityN-CHANNEL

Power2.5W

Quick Jump:

Technical Specifications

Onsemi FDMS8690 technical specifications.

General

Continuous Drain Current (ID)	27A
Current Rating	19.8A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	7.4mR
Drain to Source Voltage (Vdss)	30V
Element Configuration	Single
Fall Time	19ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.68nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	37.8W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	9mR
RoHS Compliant	Yes
Series	PowerTrench®
Turn-Off Delay Time	26ns
DC Rated Voltage	30V
Weight	0.231g