N-Channel MOSFET, single element, surface mount device with 30V drain-to-source breakdown voltage and 8.5mΩ drain-to-source resistance. Features 13.5A continuous drain current, 42W maximum power dissipation, and operates from -55°C to 150°C. Includes 9ns turn-on delay, 23ns turn-off delay, and 4ns fall time. RoHS compliant and packaged on a 3000-piece tape and reel.
Onsemi FDMS8880 technical specifications.
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.585nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.0681g |
| RoHS | Compliant |
No datasheet is available for this part.
