N-Channel MOSFET, 30V Drain to Source Voltage (Vdss) and 21A Continuous Drain Current (ID). Features 9.5mR Drain to Source Resistance (Rds On Max) and 42W Max Power Dissipation. This surface mount component offers fast switching with a 9ns Turn-On Delay Time and 4ns Fall Time. Operating temperature range from -55°C to 150°C. Packaged in Tape and Reel.
Onsemi FDMS8888 technical specifications.
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 1.585nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.074g |
| Width | 6mm |
| RoHS | Compliant |
No datasheet is available for this part.
