Dual N-Channel MOSFET, 30V drain-source breakdown voltage, 16A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features a 30V drain-source voltage (Vdss) and 20V gate-to-source voltage (Vgs). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Surface mountable in a 5mm x 6mm x 0.825mm package, supplied on a 3000-piece tape and reel.
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Onsemi FDMS9600S technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13MR |
| Fall Time | 32ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.825mm |
| Input Capacitance | 1.705nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 54ns |
| Weight | 0.009g |
| Width | 6mm |
| RoHS | Compliant |
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