Dual N-Channel MOSFET, 30V drain-source breakdown voltage, 16A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features a 30V drain-source voltage (Vdss) and 20V gate-to-source voltage (Vgs). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Surface mountable in a 5mm x 6mm x 0.825mm package, supplied on a 3000-piece tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS9600S technical specifications.
General
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
13MR
Fall Time
32ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.825mm
Input Capacitance
1.705nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
8.5mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
54ns
Weight
0.009g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS9600S Datasheet
Download the complete datasheet for Onsemi FDMS9600S to view detailed technical specifications.
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