This N-channel PowerTrench MOSFET is rated for 150 V drain-to-source voltage and up to 99 A continuous drain current at case temperature. It provides a maximum drain-source on-resistance of 6.5 mΩ at 10 V gate drive and 8.4 mΩ at 6 V, with typical total gate charge of 77 nC. The device is supplied in a low-profile PQFN-8 Dual Cool 88 package and is specified as MSL 1. It operates across a junction temperature range of -55 °C to +150 °C and the datasheet states that it is Pb-free, halide-free, and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDMT800150DC-22897 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDMT800150DC-22897 technical specifications.
| Channel Polarity | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current (Tc=25°C) | 99A |
| Continuous Drain Current (Ta=25°C) | 15A |
| On-Resistance Max @ Vgs=10V | 6.5mΩ |
| On-Resistance Max @ Vgs=6V | 8.4mΩ |
| Gate-Source Voltage Max | ±20V |
| Gate Threshold Voltage Max | 4V |
| Power Dissipation (Tc=25°C) | 156W |
| Total Gate Charge Typ | 77nC |
| Input Capacitance Typ | 5860pF |
| Reverse Recovery Charge Typ | 233nC |
| Junction Temperature Min | -55°C |
| Junction Temperature Max | 150°C |
| Moisture Sensitivity Level | 1 |
| RoHS | ROHS3 Compliant |
Download the complete datasheet for Onsemi FDMT800150DC-22897 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
