P-Channel MOSFET, single element configuration, designed for surface mount applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 1.6A. Offers a low drain-source on-resistance of 115mΩ at a nominal Vgs of -800mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 500mW. Packaged in a TO-236-3 (SOT-23) case, supplied on a 3000-piece tape and reel.
PackageTO-236-3
Current Rating-1.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDN338P technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.6A
Current Rating
-1.6A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
115mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
115mR
Element Configuration
Single
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Height
1.22mm
Input Capacitance
451pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
-800mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
115mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-800mV
Turn-Off Delay Time
16ns
Turn-On Delay Time
10ns
DC Rated Voltage
-20V
Weight
0.03g
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN338P Datasheet
Download the complete datasheet for Onsemi FDN338P to view detailed technical specifications.
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