P-Channel MOSFET, surface mount, features -20V drain-source breakdown voltage and 2A continuous drain current. Offers 80mΩ maximum drain-source on-resistance at a nominal Vgs of 1.05V. Operates within a -55°C to 150°C temperature range, with 500mW maximum power dissipation. Includes 8ns fall time and 20ns turn-on delay time.
PackageTO-236-3
Current Rating-2A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDN342P technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2A
Current Rating
-2A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
62mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
80mR
Dual Supply Voltage
20V
Element Configuration
Single
Fall Time
8ns
Gate to Source Voltage (Vgs)
12V
Height
0.94mm
Input Capacitance
635pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
1.05V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
500mW
Rds On Max
80mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1.05V
Turn-Off Delay Time
9ns
Turn-On Delay Time
20ns
DC Rated Voltage
-20V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN342P Datasheet
Download the complete datasheet for Onsemi FDN342P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.