P-channel MOSFET, 30V drain-source voltage, 1.3A continuous drain current. Features 180mΩ maximum drain-source on-resistance and a -2V gate-source threshold voltage. Operates from -55°C to 150°C with 500mW maximum power dissipation. Packaged in a 3-pin SOT-23 (TO-236-3) surface-mount package, supplied on tape and reel.
PackageTO-236-3
Voltage30V
Current13A
Current Rating-1.3A
Quick Jump:
Technical Specifications
Onsemi FDN352AP technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 1.3A |
| Current | 13A |
| Current Rating | -1.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 180MR |
| Dual Supply Voltage | -30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.94mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 4ns |
| Voltage | 30V |
| DC Rated Voltage | -30V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDN352AP Datasheet
Download the complete datasheet for Onsemi FDN352AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
