P-channel MOSFET, 30V drain-source voltage, 1.3A continuous drain current. Features 180mΩ maximum drain-source on-resistance and a -2V gate-source threshold voltage. Operates from -55°C to 150°C with 500mW maximum power dissipation. Packaged in a 3-pin SOT-23 (TO-236-3) surface-mount package, supplied on tape and reel.
PackageTO-236-3
Voltage30V
Current13A
Current Rating-1.3A
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Technical Specifications
Onsemi FDN352AP technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.3A
Current
13A
Current Rating
-1.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
180MR
Dual Supply Voltage
-30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
0.94mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
-2V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-2V
Turn-Off Delay Time
10ns
Turn-On Delay Time
4ns
Voltage
30V
DC Rated Voltage
-30V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN352AP Datasheet
Download the complete datasheet for Onsemi FDN352AP to view detailed technical specifications.
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