N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for switching applications. Features a 30V Drain to Source Breakdown Voltage and a continuous drain current of 1.9A. Offers a low Drain-source On Resistance of 60mR at a nominal Vgs of 1.6V. Packaged in a SOT-23 surface mount case, this component boasts a 500mW power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 5ns and fall time of 12ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDN357N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDN357N technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 81mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 12ns |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.94mm |
| Input Capacitance | 235pF |
| JESD-30 Code | R-PDSO-G3 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDN357N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
