FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for switching applications. Features a 30V Drain to Source Breakdown Voltage and a continuous drain current of 1.9A. Offers a low Drain-source On Resistance of 60mR at a nominal Vgs of 1.6V. Packaged in a SOT-23 surface mount case, this component boasts a 500mW power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 5ns and fall time of 12ns.