N-Channel Logic Level MOSFET, designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 2.7A. Offers a low drain-source on-resistance of 46mΩ at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 460mW. Packaged in a TO-236-3 case, measuring 2.92mm in length, 1.4mm in width, and 0.94mm in height.
PackageTO-236-3
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDN359BN technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.7A
Current Rating
2.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
46mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
46mR
Element Configuration
Single
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460mW
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
46mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
DC Rated Voltage
30V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN359BN Datasheet
Download the complete datasheet for Onsemi FDN359BN to view detailed technical specifications.
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