
Single P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a 30V Drain to Source Voltage (Vdss) and a continuous drain current of 2A. Offers a low Drain to Source On-Resistance (Rds On) of 63mR at 10V, 5A. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a TO-236-3 (SOT-23) case, this RoHS compliant component is supplied in 3000-unit reels.
Onsemi FDN360P technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2A |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 298pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | P-CHANNEL |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDN360P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
