Single P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a 30V Drain to Source Voltage (Vdss) and a continuous drain current of 2A. Offers a low Drain to Source On-Resistance (Rds On) of 63mR at 10V, 5A. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a TO-236-3 (SOT-23) case, this RoHS compliant component is supplied in 3000-unit reels.
PackageTO-236-3
Current Rating-2A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDN360P technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2A
Current Rating
-2A
Drain to Source Resistance
63mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
298pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Cut Tape
Polarity
P-CHANNEL
Rds On Max
80mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
11ns
Turn-On Delay Time
6ns
DC Rated Voltage
-30V
Weight
0.03g
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN360P Datasheet
Download the complete datasheet for Onsemi FDN360P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
