P-channel MOSFET, 60V drain-source breakdown voltage, 1.25A continuous drain current, and 170mΩ maximum drain-source on-resistance. Features include a 20V gate-source voltage, 500mW power dissipation, and a TO-236-3 surface mount package. This RoHS compliant component operates from -55°C to 150°C and is supplied on a 3000-piece tape and reel.
PackageTO-236-3
Current Rating-1.25A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDN5618P technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.25A
Current Rating
-1.25A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
170mR
Dual Supply Voltage
-60V
Element Configuration
Single
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
430pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
20V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
500mW
Rds On Max
170mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
20V
Turn-Off Delay Time
16.5ns
Turn-On Delay Time
6.5ns
DC Rated Voltage
-60V
Weight
0.03g
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN5618P Datasheet
Download the complete datasheet for Onsemi FDN5618P to view detailed technical specifications.
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