N-channel MOSFET transistor for switching applications. Features a 60V drain-source breakdown voltage and a continuous drain current of 1.7A. Offers a maximum drain-source on-resistance of 100mR at a nominal gate-source voltage of 2.4V. Packaged in a SOT-23 (TO-236-3) surface-mount package with gull-wing terminals. Operates across a temperature range of -55°C to 150°C.
PackageTO-236-3
Voltage60V
Current17A
Current Rating1.7A
Quick Jump:
Technical Specifications
Onsemi FDN5630 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.7A
Current
17A
Current Rating
1.7A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
73mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100MR
Dual Supply Voltage
60V
Fall Time
6ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
400pF
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Body Material
Plastic
Package Quantity
1
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Termination
SMD/SMT
Threshold Voltage
2.4V
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Voltage
60V
DC Rated Voltage
60V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN5630 Datasheet
Download the complete datasheet for Onsemi FDN5630 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.