N-Channel MOSFET, single element configuration, featuring 100V drain-to-source breakdown voltage and 2.7A continuous drain current. Surface mountable in a TO-236-3 package, this component offers a maximum power dissipation of 1.5W and a low Rds On of 109mR. Key switching characteristics include a 4.3ns turn-on delay and 3.4ns fall time, with input capacitance at 210pF. Operating across a temperature range of -55°C to 150°C, it is RoHS compliant and supplied on a 3000-piece tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Onsemi FDN8601 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
85.4mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
210pF
Lead Free
Lead Free
Length
1.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
109mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
3V
Turn-Off Delay Time
7.8ns
Turn-On Delay Time
4.3ns
Weight
0.03g
Width
2.92mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN8601 Datasheet
Download the complete datasheet for Onsemi FDN8601 to view detailed technical specifications.
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