N-Channel MOSFET, single element configuration, designed for surface mount applications. Features a 150V drain-to-source breakdown voltage and 150V drain-to-source voltage (Vdss). Offers a continuous drain current (ID) of 1.6A with a maximum drain-to-source resistance (Rds On) of 261mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a TO-236-3 case, supplied on a 3000-piece tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Onsemi FDN86246 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
1.6A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
261mR
Drain to Source Voltage (Vdss)
150V
Element Configuration
Single
Fall Time
2.9ns
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
225pF
Length
1.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
3.4V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
261mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
3.4V
Turn-Off Delay Time
8ns
Turn-On Delay Time
4.5ns
Weight
0.03g
Width
2.92mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDN86246 Datasheet
Download the complete datasheet for Onsemi FDN86246 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
