N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 10A continuous drain current. This UniFET II series component offers a low 750mΩ Rds On (max) and 185W max power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a 3V threshold voltage. Key switching parameters include 25ns turn-on delay, 50ns fall time, and 70ns turn-off delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDP10N60NZ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDP10N60NZ technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 640mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.07mm |
| Input Capacitance | 1.475nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 185W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 185W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 25ns |
| Weight | 1.8g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDP10N60NZ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
