N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 10A continuous drain current. This UniFET II series component offers a low 750mΩ Rds On (max) and 185W max power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a 3V threshold voltage. Key switching parameters include 25ns turn-on delay, 50ns fall time, and 70ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power185W
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Technical Specifications
Onsemi FDP10N60NZ technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
640mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Height
16.07mm
Input Capacitance
1.475nF
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
185W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
185W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET-II™
Threshold Voltage
3V
Turn-Off Delay Time
70ns
Turn-On Delay Time
25ns
Weight
1.8g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP10N60NZ Datasheet
Download the complete datasheet for Onsemi FDP10N60NZ to view detailed technical specifications.
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