N-Channel PowerTrench® MOSFET featuring 75V drain-source breakdown voltage and 58A continuous drain current. This single-element transistor offers a low 16mΩ drain-source on-resistance and 135W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C. Key switching characteristics include an 8ns turn-on delay and 30ns fall time.
PackageTO-220AB
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDP16AN08A0 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
9A
Current Rating
58A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
75V
Element Configuration
Single
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.4mm
Input Capacitance
1.857nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
135W
Mount
Through Hole
Number of Elements
1
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
135W
Radiation Hardening
No
Rds On Max
16mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
28ns
Turn-On Delay Time
8ns
DC Rated Voltage
75V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP16AN08A0 Datasheet
Download the complete datasheet for Onsemi FDP16AN08A0 to view detailed technical specifications.
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