N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. Offers a low 140mΩ drain-source on-resistance at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220 package, this single element transistor operates from -55°C to 150°C with a maximum power dissipation of 100W. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 40ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Onsemi FDP18N20F technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 145MR |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.3mm |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 145mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 16ns |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP18N20F Datasheet
Download the complete datasheet for Onsemi FDP18N20F to view detailed technical specifications.
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