N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers a maximum on-resistance of 185mΩ at a gate-source voltage of 10V. This through-hole component, packaged in TO-220, boasts a maximum power dissipation of 312.5W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 22ns and fall time of 35ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power312.5W
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Technical Specifications
Onsemi FDP22N50N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
185mR
Element Configuration
Single
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Height
9.2mm
Input Capacitance
3.2nF
Lead Free
Lead Free
Length
9.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
312.5W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
312.5W
Rds On Max
220mR
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
48ns
Turn-On Delay Time
22ns
Weight
1.8g
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP22N50N Datasheet
Download the complete datasheet for Onsemi FDP22N50N to view detailed technical specifications.
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