N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers a maximum on-resistance of 185mΩ at a gate-source voltage of 10V. This through-hole component, packaged in TO-220, boasts a maximum power dissipation of 312.5W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 22ns and fall time of 35ns.
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Onsemi FDP22N50N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 185mR |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.2mm |
| Input Capacitance | 3.2nF |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312.5W |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 22ns |
| Weight | 1.8g |
| Width | 4.5mm |
| RoHS | Compliant |
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