N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 51A continuous drain current. This UniFET™ device offers a low 60mΩ drain-source on-resistance and is housed in a TO-220AB through-hole package. Key electrical characteristics include a 5V threshold voltage, 3.41nF input capacitance, and switching times of 62ns turn-on and 98ns turn-off delay. With a maximum power dissipation of 320W and an operating temperature range of -55°C to 150°C, this RoHS compliant component is suitable for demanding power applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power320W
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Technical Specifications
Onsemi FDP51N25 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 60MR |
| Element Configuration | Single |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 3.41nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 320W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 320W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 62ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP51N25 Datasheet
Download the complete datasheet for Onsemi FDP51N25 to view detailed technical specifications.
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