N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 4.5A continuous drain current. This single element MOSFET offers a low 1.65Ω drain-to-source resistance at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 100W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns turn-on delay and 20ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Onsemi FDP5N60NZ technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.65R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.3mm |
| Input Capacitance | 600pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP5N60NZ Datasheet
Download the complete datasheet for Onsemi FDP5N60NZ to view detailed technical specifications.
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