N-CHANNEL Power Field-Effect Transistor featuring a 30V Drain to Source Breakdown Voltage and 80A Continuous Drain Current. This TO-220-3 packaged MOSFET offers a low 6.5mR Drain to Source Resistance and a maximum power dissipation of 68W. Designed for through-hole mounting, it operates across a wide temperature range from -65°C to 175°C, with a nominal gate-source voltage of 1.9V and a maximum gate-source voltage of 20V.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power68W
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Technical Specifications
Onsemi FDP6670AL technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.44nF
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
68W
Mount
Through Hole
Nominal Vgs
1.9V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
Rds On Max
6.5mR
Reach SVHC Compliant
No
Series
PowerTrench®
Termination
Through Hole
Turn-Off Delay Time
42ns
Weight
1.8g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FDP6670AL Datasheet
Download the complete datasheet for Onsemi FDP6670AL to view detailed technical specifications.
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