N-CHANNEL Power Field-Effect Transistor featuring a 30V Drain to Source Breakdown Voltage and 80A Continuous Drain Current. This TO-220-3 packaged MOSFET offers a low 6.5mR Drain to Source Resistance and a maximum power dissipation of 68W. Designed for through-hole mounting, it operates across a wide temperature range from -65°C to 175°C, with a nominal gate-source voltage of 1.9V and a maximum gate-source voltage of 20V.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power68W
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Technical Specifications
Onsemi FDP6670AL technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.44nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Nominal Vgs | 1.9V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Rds On Max | 6.5mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | Through Hole |
| Turn-Off Delay Time | 42ns |
| Weight | 1.8g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP6670AL Datasheet
Download the complete datasheet for Onsemi FDP6670AL to view detailed technical specifications.
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