
N-channel MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low 7mΩ drain-source on-resistance and a maximum power dissipation of 68W. Designed for efficient switching, it exhibits a 15ns fall time and 42ns turn-off delay time, with a nominal gate-source voltage of 1.5V. Housed in a TO-220 package, it operates across a wide temperature range from -65°C to 175°C and is RoHS compliant.
Onsemi FDP7030L technical specifications.
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