
N-Channel MOSFET featuring 40V Drain to Source Breakdown Voltage and 8.7mΩ Drain-Source On Resistance. This single element transistor offers a continuous drain current of 12A and a maximum power dissipation of 2W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 9ns turn-on delay and a 4ns fall time.
Onsemi FDP8447L technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 8.7MR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 9ns |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDP8447L to view detailed technical specifications.
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