N-Channel MOSFET, TO-220 3L package, featuring 30V Drain to Source Breakdown Voltage and 70A Continuous Drain Current. Offers low 10.5mR Drain to Source Resistance at a 10V gate drive. Designed for through-hole mounting with a maximum power dissipation of 70W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 39ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Onsemi FDP8876 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
39ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.7nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
8.7mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
51ns
Turn-On Delay Time
9ns
Weight
1.8g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDP8876 Datasheet
Download the complete datasheet for Onsemi FDP8876 to view detailed technical specifications.
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