
N-Channel MOSFET, TO-220 3L package, featuring 30V Drain to Source Breakdown Voltage and 70A Continuous Drain Current. Offers low 10.5mR Drain to Source Resistance at a 10V gate drive. Designed for through-hole mounting with a maximum power dissipation of 70W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 9ns turn-on delay and 39ns fall time.
Onsemi FDP8876 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 9ns |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDP8876 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
