N-Channel PowerTrench MOSFET featuring 30V drain-source breakdown voltage and 54A continuous drain current. This single element transistor offers a low 11.6mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 55W. Key switching characteristics include an 8ns turn-on delay and 47ns turn-off delay.
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Onsemi FDP8880 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 54A |
| Current Rating | 54A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.6MR |
| Element Configuration | Single |
| Fall Time | 51ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.24nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 11.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 30V |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
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