N-Channel Power MOSFET featuring 25V Drain to Source Breakdown Voltage and 60A Continuous Drain Current. Offers low 1.2mΩ Drain to Source Resistance, ideal for high-efficiency power applications. Surface mount design with a compact 3.4mm x 3.4mm footprint and 0.8mm height. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 4ns fall time. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDPC8011S technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.8mm |
| Input Capacitance | 1.24nF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.4V |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 38ns |
| Weight | 0.192g |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPC8011S Datasheet
Download the complete datasheet for Onsemi FDPC8011S to view detailed technical specifications.
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