N-Channel Power MOSFET featuring 25V Drain to Source Breakdown Voltage and 60A Continuous Drain Current. Offers low 1.2mΩ Drain to Source Resistance, ideal for high-efficiency power applications. Surface mount design with a compact 3.4mm x 3.4mm footprint and 0.8mm height. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 4ns fall time. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDPC8011S technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
1.2mR
Drain to Source Voltage (Vdss)
25V
Fall Time
4ns
Gate to Source Voltage (Vgs)
12V
Height
0.8mm
Input Capacitance
1.24nF
Lead Free
Lead Free
Length
3.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.4V
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.4V
Turn-Off Delay Time
38ns
Weight
0.192g
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPC8011S Datasheet
Download the complete datasheet for Onsemi FDPC8011S to view detailed technical specifications.
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