N-Channel MOSFET featuring 100V drain-source breakdown voltage and 67A continuous drain current. This component offers a low 4.5mΩ drain-source resistance (Rds On) and operates within a temperature range of -55°C to 175°C. Designed for through-hole mounting in a TO-220-3 package, it boasts a maximum power dissipation of 43W. Key switching characteristics include a 23ns turn-on delay and 15ns fall time.
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Onsemi FDPF045N10A technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 67A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| Input Capacitance | 5.27nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 23ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
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