N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 9A continuous drain current. This through-hole component offers 850mΩ drain-to-source resistance and a maximum power dissipation of 125W. Designed with a TO-220-3 package, it boasts fast switching characteristics with turn-on delay of 20ns and fall time of 30ns. Operating temperature range is -55°C to 150°C.
Onsemi FDPF10N50FT technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.17nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.27g |
| RoHS | Compliant |
No datasheet is available for this part.
