N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 11.5A continuous drain current. This single element MOSFET offers a low 700mΩ drain-to-source resistance and is designed for through-hole mounting in a TO-220F package. Key specifications include a 30V gate-to-source voltage, 1.05nF input capacitance, and fast switching times with a 21ns turn-on delay and 35ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is suitable for automotive applications with AEC-Q200 qualification.
Onsemi FDPF12N50FT technical specifications.
| Package/Case | 0603 |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Features | Automotive AEC-Q200 |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.05nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Terminations | 2 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Resistance | 1.02kR |
| RoHS Compliant | Yes |
| Series | ERJ |
| Tolerance | 0.5% |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 21ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
