N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 12A continuous drain current. This UniFET™ device offers a low 540mΩ drain-to-source resistance and is housed in a TO-220-3 through-hole package. Key switching characteristics include a 28ns turn-on delay and 47ns fall time, with a maximum power dissipation of 42W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a 1000-piece tube.
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Onsemi FDPF13N50FT technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.93nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 540mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 28ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
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