N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 12A continuous drain current. This UniFET™ device offers a low 540mΩ drain-to-source resistance and is housed in a TO-220-3 through-hole package. Key switching characteristics include a 28ns turn-on delay and 47ns fall time, with a maximum power dissipation of 42W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a 1000-piece tube.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power42W
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Technical Specifications
Onsemi FDPF13N50FT technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
500V
Element Configuration
Single
Fall Time
47ns
Gate to Source Voltage (Vgs)
30V
Height
16.07mm
Input Capacitance
1.93nF
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
540mR
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
75ns
Turn-On Delay Time
28ns
Weight
2.27g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF13N50FT Datasheet
Download the complete datasheet for Onsemi FDPF13N50FT to view detailed technical specifications.
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