N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 14A continuous drain current. This UniFET™ series component offers a low 290mΩ drain-source on-resistance and 35W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a 30V gate-source voltage rating. Key switching parameters include a 20ns turn-on delay and 30ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Onsemi FDPF14N30 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
300V
Drain-source On Resistance-Max
290MR
Dual Supply Voltage
300V
Element Configuration
Single
Fall Time
75ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.06nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Nominal Vgs
5V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Rds On Max
290mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET™
Termination
Through Hole
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Weight
2.27g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF14N30 Datasheet
Download the complete datasheet for Onsemi FDPF14N30 to view detailed technical specifications.
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