N-Channel Power MOSFET, UniFET™ series, featuring a 500V drain-source breakdown voltage and 16A continuous drain current. This through-hole component offers a low 380mΩ drain-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 40ns turn-on delay and 65ns turn-off delay, with a fall time of 80ns. Packaged in TO-220F, this RoHS compliant device has a maximum power dissipation of 38.5W.
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Onsemi FDPF16N50 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.87mm |
| Input Capacitance | 1.945nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
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