N-channel Power MOSFET featuring 500V drain-source voltage and 15A continuous drain current. This single-element enhancement mode transistor utilizes UniFET process technology and is housed in a 3-pin TO-220FP package with a tab. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 5V, and a maximum drain-source on-resistance of 480 mOhm at 10V. The through-hole mounted component offers a maximum power dissipation of 38.5W and operates within a temperature range of -55°C to 150°C.
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Onsemi FDPF16N50UT technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.1 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | UniFET |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 15A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 480@10VmOhm |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Typical Gate Charge @ 10V | 32nC |
| Typical Input Capacitance @ Vds | 1495@25VpF |
| Maximum Power Dissipation | 38500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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