N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This UniFET™ series component offers a low 265mΩ drain-source on-resistance and operates with a 5V threshold voltage. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 38.5W and a maximum operating temperature of 150°C. Key switching characteristics include a 55ns turn-on delay and 90ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power38.5W
Quick Jump:
Technical Specifications
Onsemi FDPF18N50 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
265mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
265MR
Element Configuration
Single
Fall Time
90ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
2.86nF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38.5W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
38.5W
Rds On Max
265mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET™
Threshold Voltage
5V
Turn-Off Delay Time
95ns
Turn-On Delay Time
55ns
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF18N50 Datasheet
Download the complete datasheet for Onsemi FDPF18N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
