N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 51A continuous drain current. This UniFET™ device offers a low 60mΩ drain-source on-resistance at a nominal 5V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 38W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 62ns turn-on delay and 130ns fall time.
PackageTO-220-3
Current Rating28A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDPF51N25 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
51A
Current Rating
28A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
60MR
Dual Supply Voltage
250V
Element Configuration
Single
Fall Time
130ns
Gate to Source Voltage (Vgs)
30V
Height
16.07mm
Input Capacitance
3.41nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Through Hole
Nominal Vgs
5V
On-State Resistance
48mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
60mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET™
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
98ns
Turn-On Delay Time
62ns
DC Rated Voltage
250V
Weight
2.27g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF51N25 Datasheet
Download the complete datasheet for Onsemi FDPF51N25 to view detailed technical specifications.
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