N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 51A continuous drain current. This UniFET™ device offers a low 60mΩ drain-source on-resistance at a nominal 5V gate-source voltage. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 38W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 62ns turn-on delay and 130ns fall time.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 28A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 60MR |
| Dual Supply Voltage | 250V |
| Element Configuration | Single |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 3.41nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| On-State Resistance | 48mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 62ns |
| DC Rated Voltage | 250V |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
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These are design resources that include the Onsemi FDPF51N25
This onsemi product change notice announces the reactivation of the FDPF51N25 power MOSFET, which was previously designated for discontinuance.
