
N-Channel Power MOSFET, UniFET™ series, featuring a 250V drain-to-source breakdown voltage and a continuous drain current of 51A. This through-hole component offers a low 60mΩ drain-to-source resistance (Rds On Max) and is housed in a TO-220-3 package. Optimized for switching applications, it exhibits turn-on delay time of 62ns and turn-off delay time of 98ns, with a fall time of 130ns. Maximum power dissipation is rated at 38W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant.
Onsemi FDPF51N25YDTU technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.41nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 62ns |
| Weight | 2.565g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDPF51N25YDTU to view detailed technical specifications.
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