N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 4.2A continuous drain current. This UniFET II device offers a low 1.75 Ohm Rds On maximum and is housed in a TO-220F package for through-hole mounting. Key performance characteristics include a 5V threshold voltage, 485pF input capacitance, and fast switching times with a 5ns turn-on delay. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 30W.
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Onsemi FDPF5N50NZF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.57R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 485pF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 1.75R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 5ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
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