N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. Offers a low 1.4 Ohm drain-source on-resistance. This single-element transistor is housed in a TO-220F package with through-hole mounting. Key specifications include a maximum power dissipation of 28W and operating temperatures from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Onsemi FDPF5N50T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 13ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF5N50T Datasheet
Download the complete datasheet for Onsemi FDPF5N50T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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