N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. Offers a low 1.4 Ohm drain-source on-resistance. This single-element transistor is housed in a TO-220F package with through-hole mounting. Key specifications include a maximum power dissipation of 28W and operating temperatures from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Onsemi FDPF5N50T technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.4R
Element Configuration
Single
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
16.07mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
28W
Radiation Hardening
No
Rds On Max
1.4R
RoHS Compliant
Yes
Series
UniFET™
Turn-Off Delay Time
28ns
Turn-On Delay Time
13ns
Weight
2.27g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDPF5N50T Datasheet
Download the complete datasheet for Onsemi FDPF5N50T to view detailed technical specifications.
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