N-channel Power MOSFET, UniFET II series, featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. Offers a maximum drain-source on-resistance of 2 Ohms and a typical 1.65 Ohm resistance. Designed for through-hole mounting in a TO-220 package, with a maximum power dissipation of 33W. Includes fast switching characteristics with turn-on delay time of 15ns and fall time of 20ns.
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Onsemi FDPF5N60NZ technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.65R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.87mm |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Compliant |
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