N-Channel MOSFET featuring 100V drain-source breakdown voltage and 12A continuous drain current. This single-element transistor offers a low 68mΩ Rds On and is packaged in a TO-220-3 through-hole mount. Operating across a -55°C to 150°C temperature range, it boasts a 24W maximum power dissipation and fast switching times with a 6ns fall time. RoHS compliant and supplied in a rail/tube package.
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Onsemi FDPF680N10T technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| Input Capacitance | 1nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 24W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 24W |
| Radiation Hardening | No |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 13ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
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