The FDPF7N50F is a single N-channel MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 6A. It features a maximum power dissipation of 38.5W and a maximum operating temperature range of -55°C to 150°C. The device is packaged in a TO-220-3 package and is suitable for through hole mounting. The FDPF7N50F is RoHS compliant and part of the UniFET series.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power38.5W
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Technical Specifications
Onsemi FDPF7N50F technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.15R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 960pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38.5W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Rds On Max | 1.15R |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 35ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDPF7N50F Datasheet
Download the complete datasheet for Onsemi FDPF7N50F to view detailed technical specifications.
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