N-Channel MOSFET featuring 500V drain-to-source breakdown voltage and 5A continuous drain current. This single-element transistor offers a low 1.5 Ohm drain-to-source resistance (Rds On Max) and is housed in a TO-220-3 through-hole package. Key switching characteristics include a 6ns turn-on delay and 35ns fall time, with a maximum power dissipation of 39W. Operating temperature range spans from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power31.3W
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Technical Specifications
Onsemi FDPF7N50U technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
500V
Element Configuration
Single
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
940pF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
39W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
31.3W
Rds On Max
1.5R
Series
UniFET™
Turn-Off Delay Time
25ns
Turn-On Delay Time
6ns
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FDPF7N50U Datasheet
Download the complete datasheet for Onsemi FDPF7N50U to view detailed technical specifications.
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