N-Channel Trench MOSFET, 150V Drain-Source Voltage, 4.9A Continuous Drain Current, and 47mΩ Maximum Drain-Source On-Resistance. This single-element MOSFET features a 2.5W maximum power dissipation, 2.05nF input capacitance, and a 4V threshold voltage. Designed for surface mounting in an SOIC package, it offers fast switching characteristics with a 14ns turn-on delay and 22ns fall time. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
Onsemi FDS2572 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | 4.9A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 47mR |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 47mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 150V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
