N-Channel MOSFET featuring 200V drain-source breakdown voltage and 3.9A continuous drain current. Offers 70mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 2.9V. This surface-mount device, packaged in SOIC, boasts a 2.5W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 10ns fall time.
Onsemi FDS2672 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 59mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.535nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.9V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2.9V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 200V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
