N-channel MOSFET, a single element configuration, offers a 200V drain-to-source breakdown voltage and a continuous drain current of 3.9A. Featuring a low 59mΩ drain-to-source resistance, this component is designed for surface mounting within a SOIC package. Operating across a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2.5W and is RoHS compliant.
Sign in to ask questions about the Onsemi FDS2672_F085 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDS2672_F085 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 59mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.535nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.2304g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS2672_F085 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
