N-Channel PowerTrench® MOSFET, 80V Vdss, 8.9A continuous drain current, and 16mΩ Rds On Max. This single-element MOSFET features a 4V threshold voltage and a 1.99nF input capacitance. Designed for surface mounting in an SOIC package, it operates from -55°C to 150°C with a 2.5W power dissipation. RoHS compliant and lead-free.
PackageSOIC
Current Rating8.9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3572 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Current Rating | 8.9A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16MR |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.99nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 80V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3572 Datasheet
Download the complete datasheet for Onsemi FDS3572 to view detailed technical specifications.
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