N-Channel MOSFET featuring 100V drain-source breakdown voltage and 7.5A continuous drain current. Offers a low 22mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount SOIC package component operates within a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Includes 27ns fall time and 37ns turn-off delay time, packaged on a 2500-piece tape and reel.
PackageSOIC
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3672 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
19MR
Dual Supply Voltage
100V
Element Configuration
Single
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
2.015nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
37ns
Turn-On Delay Time
14ns
DC Rated Voltage
100V
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS3672 Datasheet
Download the complete datasheet for Onsemi FDS3672 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.